TUGAS 8

Title N-channel MOSFET grid generation
$ Form grid of structure and give doping distribution
$ ****************** define rectangular grid **************
mesh	rectangular	nx=25	ny=25	diag.flip	smooth=1
x.mesh	n=1	l=1	r=1
x.mesh	n=25	l=1	r=1
y.mesh	n=1	l=-0.02	r=1
y.mesh	n=3	l=0	r=1
y.mesh	n=14	l=0.7	r=1.05
y.mesh	n=25	l=2.5	r=1.2
$ ********** ******* regions ***************************
regions	num=1	y.max=0	 	oxide
regioon	num=2 	y.min=0 	silicon
$ ****************** electrodes ************************
$ #1-GATE #2-SUBSTRATE #3-SOURCE #4-DRAIN
electrode	num=1	x.min=0.520	length=1.460
electrode	num=2	substrate
electrode	num=3	source	length=0.417	y.min=0		y.max=0
electrode	num=4	drain	length=0.417	y.min=0		y.max=0
$ ****************** doping and fixed charge *************
doping	reg=2	gaussian		concentration=1.e16	characteristic=0.10
+	acceptor	peak=0.0	outfile=dopingm
doping	reg=2	gaussian		concentration=1.e20	characteristic=0.10
+	donor	peak=0.0	x.r=0.6			ratio=0.75
doping	reg=2	gaussian		concentration=1.e20	characteristic=0.10
+	donor	peak=0.0	x.l=2.0			ratio=0.75
doping 	reg=2 	uniform		concentration=1.e16	acceptor
$ ****************** regrid on doping *******************
plot.2d		grid	no.top	boundry	no.fill	pa
regrid		doping	log	reg=2	ratio=4	smooth.k=1	outfile=gmesh1	dopfile=dopingm
regrid		doping	log	reg=2	ratio=4	smooth.k=1	outfile=gmesh2	dopfile=dopingm
contact		num=1	n.polysilicon
symbolic	gummel	carriers=0
solve		initial
regrid		potential	 ratio=0.2 region=2	smooth.k=1	outfile=gmesh3	dopfile=dopingm
plot.2d		grid	no.top	boundry	no.fill	pa
plot.1d		log	abs	doping	x.s=0	y.s=0	x.e=0	y.e=1.5	points	pa
plot.1d		log	abs	doping	x.s=0	y.s=0	x.e=2.5	y.e=0	line.type=2	pa
plot.1d		log	abs	doping	x.s=1.2	y.s=0	x.e=1.2	y.e=1.5	line.type=2	pa
end

Title N-channel MOSFET Id/Vd characteristic
Mesh	inf=gmesh3
Contact	num=1	n.polysilicon
Models	print	temp=300	conmob	fldmob	bgn	fermi	incomplete
+	tfldmb2	OX.L=0.6	OX.R=2
interf	qf=3E10
symb	newton	carrier=1	selectrons
method	xnorm	autonr		itlimit=30	trap=.5	p.tol=1.e-4
+	c.tol=1.e-4
solve	initial
solve	previous	v4=0.005
solve	project	vstep=0.25	nstep=3	elect=1
solve	project	v1=1.0		outf=g111
solve	project	vstep=0.25	nstep=3	elect=1
solve	project	v1=2.0		outf=g211
solve	project	vstep=0.25	nstep=3	elect=1
solve	project	v1=3.0		outf=g311
solve	project	vstep=0.25	nstep=3	elect=1
solve	project	v1=4.0		outf=g411
load	inf=g111
log	outf=d111
solve	vstep=0.1	nstep=9	elect=4	previous
solve	previous		v4=1.0	vstep=0.1	nstep=40	elect=4
load	inf=g211
log	outf=d211
solve	vstep=0.1	nstep=9	elect=4	previous
solve	previous		v4=1.0	vstep=0.1	nstep=40	elect=4
load	inf=g311
log	outf=d311
solve	vstep=0.1	nstep=9	elect=4	previous
solve	previous		v4=1.0	vstep=0.1	nstep=40	elect=4
load	inf=g411
log	outf=d411
solve	vstep=0.1	nstep=9	elect=4	previous
solve	previous		v4=1.0	vstep=0.1	nstep=40	elect=4
end

Title	N-channel MOSFET I/d/Vd characterisation
Mesh	inf=gmesh3
Plot.1d	inf=d411	x.ax=v4	y.ax=i4	abs	x.label=VDS	y.label=IDS	pa
+	title=”Fitting of NMOSFET”		max=3.9e-4
+	subtitle=”output characteristic”
plot.1d	inf=d311	x.ax=v4	y.ax=i4	abs	unch	pa
plot.1d	inf=d211	x.ax=v4	y.ax=i4	abs	unch	pa
plot.1d	inf=d111	x.ax=v4	y.ax=i4	abs	unch	pa
fit	mos		fit.type=2	bulk=2	drain=4	gate=1
+ 	line1.type=4	line2.type=5

Titile N-channel MOSFET substrate Current
Mesh	inf=gmesh3
Plot.1d	inf=substr5	x.ax=v1	y.ax=i2	abs	x.label=VGS	y.label=Isub	log  points  pa
+	title=”Substrate current”	subtitle=”versus gate bias NMOSFET”
plot.1d	inf=substr4	x.ax=v1	y.ax=i2	abs	log	points	unch	pa
end
Title	N.channel	MOSFET substrate Current extraction
Mesh	inf=gmesh3
Contact	num=1	n.polysilicon
Models	print	temp=300	conmob	fldmob	bgn	fermi	incomplete
+	tfldmb2	OX.L=0.6	OX.R=2
impact
interf	qf=3E10
symb	carrires=0
method	iccg	damped	itlimit=30
solve	init
solve	v1=0.3	v4=4.0	local	outf=sb4
solve	v1=0.3	v4=5.0	local	outf=sb5
symb	newton	carriers=2
load	inf=sb4
solve	prev	v1=0.4	vstep=0.1	nstep=6	elect=1
solve	prev	vstep=0.25		nstep=8	elect=1
solve	prev	vstep=0.50		nstep=8	elect=1
load	inf=sb5
solve	prev	v1=0.4	vstep=0.1	nstep=6	elect=1
solve	prev	vstep=0.25		nstep=8	elect=1
solve	prev	vstep=0.50		nstep=8	elect=1
end

$ PN dioda AC simulation
mesh	inf=gmesh3
contact	num=1	aluminum
interf	qf=3e10
symb	newton	carr=2
method	xnorm	autonr
models	print	temp=300	fldmob	srh
+	auger	conmob	fldmob	tfldmb2	ox.l=0.0	ox.r=2.0
solve	init
log	acfile=ac.log1
solve	previous	v1=1.00	ac	freq=1e6 term=12
solve	previous	v1=-0.75	vstep=0.5	nstep=25	elect=1	ac	freq=1e6
+	term=12
end

$ PN dioda AC simulation
mesh	inf=gmesh3
plot.1d	inf=ac.log1	x.ax=v1	y.ax=e12	points	pa
end